An analysis of current saturation mechanism of junction field-effect transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31669/01476120.pdf?arnumber=1476120
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon Power Field Controlled Devices and Integrated Circuits;Silicon Integrated Circuits;1981
2. Microwave Power Semiconductor Devices. II;Advances in Electronics and Electron Physics;1978
3. Channel edge location and potential distribution in a junction field effect transistor;Solid-State Electronics;1976-11
4. The “barrier mode” behaviour of a junction FET at low drain currents;Solid-State Electronics;1975-11
5. An analysis and numerical solution for the electrical characteristics of field effect devices;Solid-State Electronics;1975-07
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