On the origin of leakage currents in silicon-on-sapphire MOS transistors-Reference-Cited by-同舟云学术

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On the origin of leakage currents in silicon-on-sapphire MOS transistors

Published:1977-06 Issue:6 Volume:24 Page:730-738
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

McGreivy D.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31764/01479004.pdf?arnumber=1479004

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film;IEEE Transactions on Electron Devices;2011-11

2. Monitoring the Electrical Properties of the Back Silicon Interface of Silicon-on-Sapphire Wafers;IEEE Electron Device Letters;2008-04

3. Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire;IEEE Transactions on Electron Devices;1999

4. LPCVD Polysilicon SOI MOSFET Technology for 3-D Integration;IETE Journal of Research;1990-05

5. Isolation Techniques;VLSI Electronics Microstructure Science;1989

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