Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arrays-Reference-Cited by-同舟云学术

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Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arrays

Published:1970-12 Issue:12 Volume:17 Page:1077-1083
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Schlacter M.M.,Schlegel E.S.,Keen R.S.,Lathlaen R.A.,Schnable G.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31679/01476312.pdf?arnumber=1476312

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation, characterization and application of RF sputter deposited boron doped silicon dioxide thin films;Materials Science in Semiconductor Processing;2013-12

2. Investigation of RF sputtered PSG films for MEMS and semiconductor devices;Microelectronic Engineering;2009-01

3. Reliability;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

4. Studies on reducing leakage current and improving breakdown voltage of large-area silicon detectors: technology and results;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-07

5. Infrared Spectroscopic Analysis of Phosphosilicate Glass Films for Micromachining;Journal of The Electrochemical Society;1996-03-01

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