Distribution of flat-band voltages in laterally nonuniform MIS capacitors and application to a test for nonuniformities-Reference-Cited by-同舟云学术

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Distribution of flat-band voltages in laterally nonuniform MIS capacitors and application to a test for nonuniformities

Published:1978-12 Issue:12 Volume:25 Page:1368-1373
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang C.C.,Johnson W.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31783/01479751.pdf?arnumber=1479751

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band alignment at interfaces of two-dimensional materials: internal photoemission analysis;Journal of Physics: Condensed Matter;2020-07-15

2. Oxide and interface charges in thin SiO2 films thermally grown on RF plasma hydrogenated silicon;Vacuum;2004-08

3. Direct indication of interface trap states in an MOS capacitor from the peaks of optical illumination‐induced capacitances;Journal of the Chinese Institute of Engineers;1987-06

4. The use of charge pumping to characterize generation by interface traps;IEEE Transactions on Electron Devices;1986-07

5. Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique;Applied Physics A Solids and Surfaces;1986-05

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