A New Generation of Memory Devices Enabled by Ferroelectric Hafnia and Zirconia-Reference-Cited by-同舟云学术

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A New Generation of Memory Devices Enabled by Ferroelectric Hafnia and Zirconia

Published:2021-05-16 Issue: Volume: Page:
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Container-title:2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
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Author:

Schenk Tony,Mueller Stefan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9477294/9477312/09477377.pdf?arnumber=9477377

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor;Current Applied Physics;2024-11

2. Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf_0.5Zr_0.5O₂ Fatigue;Advanced Electronic Materials;2024-06-28

3. Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film;ECS Journal of Solid State Science and Technology;2024-04-01

5. Ferroelectric tunnel junctions: promise, achievements and challenges;Journal of Physics D: Applied Physics;2024-03-26

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