Transient base dynamics of bipolar transistors in high injection
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/7923/00337453.pdf?arnumber=337453
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling Nonquasi-Static Effects in SiGe HBTs;IEEE Transactions on Electron Devices;2010-07
2. The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications;IEEE Transactions on Power Electronics;2007-11
3. Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels;IEEE Transactions on Electron Devices;1998-07
4. Analysis and modeling of small-signal bipolar transistor operation at arbitrary injection levels;IEEE Transactions on Electron Devices;1998
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