Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors
Author:
Funder
University of Hong Kong
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8398557/08353389.pdf?arnumber=8353389
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric;IEEE Electron Device Letters;2024-07
2. Hysteresis-Free High-Performance Pentacene Organic Thin-Film Transistor by Sputtering Amorphous Barium Titanate as Ultrathin High-k Gate Dielectric;IEEE Transactions on Electron Devices;2024
3. Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics;Journal of Vacuum Science & Technology B;2023-11-02
4. Remote Phonon Scattering in InGaZnO Thin-Film Transistor with Double-Layered High-κ Gate Dielectric;Journal of Electronic Materials;2023-09-13
5. Impact of Gate-Dielectric Annealing Temperature on Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-10
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