Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/4357973/08528436.pdf?arnumber=8528436
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium–Gallium–Zinc Oxide Films;IEEE Electron Device Letters;2021-09
2. Progress in light-to-frequency conversion circuits based on low dimensional semiconductors;Nano Research;2021-06-26
3. Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors;Nanomaterials;2021-06-17
4. Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe2 field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers;Nano Research;2021-05-20
5. Flexible Light‐to‐Frequency Conversion Circuits Built with Si‐Based Frequency‐to‐Digital Converters via Complementary Photosensitive Ring Oscillators with p‐Type SWNT and n‐Type a‐IGZO Thin Film Transistors;Small;2021-05-09
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