A Ka-band Three-Stage GaN MMIC Doherty Power Amplifier with Wideband Tee-line Doherty Network for 5G Applications
Author:
Affiliation:
1. Mitsubishi Electric Corporation,Information Technology R&D Center,Kamakura,Japan
2. Mitsubishi Electric Corporation, Japan,High Frequency & Optical Device Works,Itami,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10243164/10243121/10243248.pdf?arnumber=10243248
Reference6 articles.
1. A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications
2. 8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications
3. A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications
4. A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology
5. A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN MMIC Power Amplifiers for 5G and Satellite Communications;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01
2. Asymmetric Doherty power amplifier design considering the effects of peaking power amplifier early conduction;AEU - International Journal of Electronics and Communications;2024-05
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