A Distributed Model with a High Scaling Accuracy for GaN HEMTs Up to 100 GHz-Reference-Cited by-同舟云学术

A Distributed Model with a High Scaling Accuracy for GaN HEMTs Up to 100 GHz

Published:2023-08-14 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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Author:

Yamaguchi Yutaro¹,Kudara Ken¹,Shinjo Shintaro¹,Yamanaka Koji¹,Miyamoto Yasuyuki²

Affiliation:

1. Mitsubishi Electric Corporation,Information Technology R&D Center,Kamakura, Kanagawa,Japan

2. Tokyo Institute of Technology,Dept. Electrical and Electronic Eng.,Meguro-ku, Tokyo,Japan

Funder

National Institute of Information and Communications Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10243164/10243121/10243224.pdf?arnumber=10243224

Reference6 articles.

1. Distributed-Model-Based Design Approach for Achieving Matched Phase Velocities in High-Frequency GaN HEMTs

2. Impact of Wave Propagations on Figures of Merit in Millimeter-Wave Transistors

3. EM-based parasitic extraction applied to scaled transistor models for high frequency GaN technologies;chang;2022 17th European Microwave Integrated Circuits Conference (EuMIC),2022

4. Extensions of the Chalmers nonlinear HEMT and MESFET model

5. A Small-Signal Model Extraction and Optimization Method for AlGaN/GaN HEMT Up to 110 GHz

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