Impact of Dual Oxide on Charge Plasma-based Junctionless Tunnel Field Effect Transistor-Reference-Cited by-同舟云学术

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Impact of Dual Oxide on Charge Plasma-based Junctionless Tunnel Field Effect Transistor

Published:2024-02-23 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 International Conference on Integrated Circuits and Communication Systems (ICICACS)
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Author:

Chandan Bandi Venkata¹,Dharmender Dharmender²,Nigam Kaushal Kumar³,Srinivasa Subbarao P.¹

Affiliation:

1. Institute of Science and Technology, JNTU,School of Nano Technology,Kakinada,A.P,India

2. G.L Bajaj Institute of Technology and Management,Department of Electronics and Communication Engineering,Gr. Noida,U.P,India

3. National Institute of Technology (NIT),Department of Electronics and Telecommunication Engineering,Raipur,Chhattisgarh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10498131/10498150/10499180.pdf?arnumber=10499180

Reference15 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Complementary tunneling transistor for low power application

3. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

4. Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET

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