Photoluminescence imaging for slip line detection and characterization in silicon substrates-Reference-Cited by-同舟云学术

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Photoluminescence imaging for slip line detection and characterization in silicon substrates

Published:2022-05-02 Issue: Volume: Page:
ISSN:
Container-title:2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Duru Romain¹,Mica Isabella²,Frascaroli Jacopo²,Bellanger Pierre³

Affiliation:

1. STMicroelectronics,FEM & PR&D CR300 Operations,Crolles,France

2. STMicroelectronics,Agrate AG200 Operations,Agrate,Italy

3. Semilab,Budapest,Hungary

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9792471/9792473/09792524.pdf?arnumber=9792524

Reference10 articles.

1. Recombination radiation on dislocations in silicon;drozdov;J Exp Theor Phys Lett,1976

2. Thermoplastic Deformation of Silicon Wafers

3. Photoluminescence characterization of defects in Si and SiGe structures

4. Dislocation-related photoluminescence in silicon

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