Analysis of microwave characteristics of photoconductive IC structures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/50/23176/01075508.pdf?arnumber=1075508
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Use of active loads with MSM photodetectors in digital GaAs MESFET photoreceivers;Journal of Lightwave Technology;1992
2. Electromagnetic and transport considerations in subpicosecond photoconductive switch modeling;IEEE Transactions on Microwave Theory and Techniques;1990-05
3. Epitaxial n/sup +/ layer GaAs mesa-finger interdigital surface photodetectors;IEEE Electron Device Letters;1989-10
4. Transport correlation coefficients and photoconductive switching;Solid-State Electronics;1988-03
5. TRANSPORT CORRELATION COEFFICIENTS AND PHOTOCONDUCTIVE SWITCHING;Hot Carriers in Semiconductors;1988
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