L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack-Reference-Cited by-同舟云学术

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L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Published:2015-03 Issue:3 Volume:36 Page:223-225
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Tae-Woo,Koh Dong-Hyi,Shin Chan-Soo,Park Won-Kyu,Orzali Tommaso,Hobbs Chris,Maszara Witek P.,Kim Dae-Hyun

Funder

Research and Development Program for Industrial Core Technology through the Ministry of Trade, Industry and Energy, Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7046461/07015527.pdf?arnumber=7015527

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Concentric Cylindrical Surrounding Double-Gate (CSDG) MOSFETs – A Fabrication Perspective in Nanoscale Regime;Silicon;2022-10-28

2. Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm;Silicon;2022-10-25

3. Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-08-19

4. Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak g m and Reduced Leakage Current;IEEE Transactions on Electron Devices;2022-02

5. Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La2O3 for 5-nm Technology;IEEE Access;2021

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