Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon-Reference-Cited by-同舟云学术

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Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon

Published:2022-01 Issue:1 Volume:28 Page:1-10
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Fitch Christopher R.^ORCID,Baltusis Aidas^ORCID,Marko Igor P.^ORCID,Jung Daehwan,Norman Justin C.,Bowers John E.^ORCID,Sweeney Stephen J.^ORCID

Funder

Engineering and Physical Sciences Research Council

Advanced Research Projects Agency - Energy

U.S. Department of Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/2944/9496280/9503318-aam.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment;Journal of Physics: Condensed Matter;2024-07-26

2. Reflection sensitivity of dual-state quantum dot lasers;Photonics Research;2023-09-27

3. Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications;2022 28th International Semiconductor Laser Conference (ISLC);2022-10-16

4. On-chip infrared photonics with Si-Ge-heterostructures: What is next?;APL Photonics;2022-05-01

5. Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers;Nanomaterials;2022-03-24

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