GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using <emphasis emphasistype="italic">In Situ</emphasis> <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiH}_{\bf 4}$</tex> </formula> Treatment Process During Epitaxial Growth-Reference-Cited by-同舟云学术

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GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ $\hbox{SiH}_{\bf 4}$ Treatment Process During Epitaxial Growth

Published:2009-07 Issue:4 Volume:15 Page:1275-1280
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Tsai C.M.,Jinn-Kong Sheu ,Wei-Chih Lai ,Ming-Lun Lee ,Shoou-Jinn Chang ,Chang C.S.,Ko T.K.,Shen C.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/5191271/04799149.pdf?arnumber=4799149

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates;physica status solidi (a);2015-01-14

2. Reducing a Piezoelectric Field in InGaN Active Layers by Varying Pattern Sapphire Substrates;IEEE Transactions on Electron Devices;2013-12

3. Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate;Journal of Lightwave Technology;2013-04

4. Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes;IEEE Electron Device Letters;2012-12

5. Vertical InGaN light-emitting diode with a retained patterned sapphire layer;Optics Express;2012-11-02

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