ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications-Reference-Cited by-同舟云学术

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ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications

Published:2011-07 Issue:4 Volume:17 Page:1092-1101
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Pearton S. J.,Chang C. Y.,Chu B. H.,Lo Chien-Fong,Ren Fan,Chen Wenchao,Guo Jing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/5975326/05482207.pdf?arnumber=5482207

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical heterojunction photodetector of In2Se3/PtS2 with high polarization sensitivity and tunable electronic characteristics;Materials Today Communications;2024-08

2. Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor;Sensors and Actuators B: Chemical;2023-10

3. Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation;IEEE Transactions on Electron Devices;2022-12

4. Low Concentration Hydrogen Detection Properties of Metal-Insulator-Semiconductor Algan/Gan Hemt Sensor;SSRN Electronic Journal;2022

5. Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications;Silicon;2021-01-14

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