Tunable electronic properties in two-dimensional h-Si/GaP van der Waals heterobilayer
Author:
Affiliation:
1. Khulna University of Engineering and Technology,Department of Electrical and Electronic Engineering,Khulna,Bangladesh
2. University of Nevada, Reno,Department of Electrical and Biomedical Engineering,Reno,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9733402/9733430/09733629.pdf?arnumber=9733629
Reference16 articles.
1. DFT study of the electronic and vibrational properties of silicene/stanene heterobilayer
2. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations;?ahin;Phys Rev B,2009
3. Generalized Gradient Approximation Made Simple;burke;Phys Rev Lett,1996
4. Electronic properties of Ge/2D-GaP heterobilayer: A first-principles investigation
5. Widely tunable electronic properties in graphene/two-dimensional silicon carbide van der Waals heterostructures
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