TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations
Author:
Affiliation:
1. Shanghai Jiao Tong University,Department of Micro-Nano Electronics,Shanghai,China,200240
2. Tsinghua University,Department of Electronic Engineering,Beijing,China,100084
Funder
National Natural Science Foundation of China
National Key R&D Program of China
Natural Science Foundation of Shanghai
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10323590/10323543/10323889.pdf?arnumber=10323889
Reference27 articles.
1. Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM;nikhil;IEEE International Electron Devices Meeting (IEDM),2017
2. CREAM: computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration;liukai;ACM/IEEE Design Automation ConferenceCREAM computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration,2022
3. Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
4. Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells
5. HD-CIM: Hybrid-Device Computing-In-Memory Structure Based on MRAM and SRAM to Reduce Weight Loading Energy of Neural Networks
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