Resolving the Reliability Issues of Open Blocks for 3-D NAND Flash: Observations and Strategies

Author:

Li Qiao1ORCID,Ye Min2,Cui Yufei3ORCID,Ren Tianyu2,Kuo Tei-Wei4,Xue Chun Jason2ORCID

Affiliation:

1. School of Informatics, Xiamen University, Xiamen, China

2. Department of Computer Science, City University of Hong Kong, Kowloon Tong, Hong Kong

3. School of Computer Science, McGill University, Montreal, Canada

4. Department of Computer Science and Information Engineering, National Taiwan University, Taipei, Taiwan

Funder

Research Grants Council of the Hong Kong Special Administrative Region, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Edge Word-Line Reliability Problem in 3-D NAND Flash Memory: Observations, Analysis, and Solutions;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-06

2. PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3D NAND Flash;IEEE Transactions on Device and Materials Reliability;2023

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