Minato: A Read-Disturb-Aware Dynamic Buffer Management Scheme for NAND Flash Memory
Author:
Affiliation:
1. Department of Computer Science, Jinan University, Guangzhou, China
Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/43/10564796/10430447.pdf?arnumber=10430447
Reference43 articles.
1. Prolonging 3D NAND SSD lifetime via read latency relaxation
2. Characterizing 3D Floating Gate NAND Flash
3. Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory
4. Characterizing 3D Charge Trap NAND Flash: Observations, Analyses and Applications
5. Reducing solid-state drive read latency by optimizing read-retry
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