Theoretical and Experimental Analysis of a CSWPL Behavioral Model for Microwave GaN Transistors Including DC Bias Voltages-Reference-Cited by-同舟云学术

Theoretical and Experimental Analysis of a CSWPL Behavioral Model for Microwave GaN Transistors Including DC Bias Voltages

Published:2023 Issue: Volume: Page:1-1
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Tang Xiaoqiang¹,Raffo Antonio²^ORCID,Donato Nicola³^ORCID,Crupi Giovanni⁴^ORCID,Cai Jialin¹^ORCID

Affiliation:

1. Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China

2. Department of Engineering, University of Ferrara, Ferrara, Italy

3. Department of Engineering, University of Messina, Messina, Italy

4. BIOMORF Department, University of Messina, Messina, Italy

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Provincial Universities of Zhejiang

Qianjiang Talent Project Type-D of Zhejiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx7/43/6917053/10293152.pdf?arnumber=10293152

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