A Non-Hysteretic Sub-60-mV/decade Subthreshold Slope and ON-Current Boosts in Electrostrictive-Piezoelectric Transistors-Reference-Cited by-同舟云学术

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A Non-Hysteretic Sub-60-mV/decade Subthreshold Slope and ON-Current Boosts in Electrostrictive-Piezoelectric Transistors

Published:2017-12 Issue:12 Volume:38 Page:1759-1762
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jana Raj K.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8103303/08085183.pdf?arnumber=8085183

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi2₂N₄, MoSi₂P₄, and MoGe₂N₄ Monolayers;IEEE Transactions on Electron Devices;2023-11

2. Piezoelectric Strain FET (PeFET)-Based Nonvolatile Memories;IEEE Transactions on Electron Devices;2023-06

3. Adaptive compound control based on generalized Bouc–Wen inverse hysteresis modeling in piezoelectric actuators;Review of Scientific Instruments;2021-11-01

4. An MoS2-Based Piezoelectric FET: A Computational Study of Material Properties and Device Design;IEEE Transactions on Electron Devices;2019-04

5. Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges;IEEE Transactions on Electron Devices;2019-04

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