Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal-Reference-Cited by-同舟云学术

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Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

Published:2018-02 Issue:2 Volume:39 Page:244-247
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Xiangyu^ORCID,Lee Bongmook^ORCID,Misra Veena

Funder

Office of Energy Efficiency and Renewable Energy, U.S. Department of Energy with North Carolina State University, PowerAmerica Institute.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ieeexplore.ieee.org/ielaam/55/8269808/8233202-aam.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs;IEEE Transactions on Electron Devices;2023-02

2. Static Performance and Threshold Voltage Stability Improvement of Al₂O₃/LaAlO₃/SiO₂ Gate-Stack for SiC Power MOSFETs;IEEE Transactions on Electron Devices;2022-02

3. High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer;Japanese Journal of Applied Physics;2021-02-08

4. Optimized JFET regions of 4H-SiC VDMOS with reduced on-resistance and improved gate oxide reliability;Journal of Physics D: Applied Physics;2020-05-06

5. Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx;IEEE Transactions on Electron Devices;2019-01

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