IEEE Electron Device Letters
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8049543/08049545.pdf?arnumber=8049545
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterizing Probabilistic Bits with Quantum Spin Defects;2024 Device Research Conference (DRC);2024-06-24
2. Triple Self-Aligned Split-Gate Architecture for High-Speed Applications of 4H-SiC VDMOSFETs;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22
3. 1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHz;2023 International Electron Devices Meeting (IEDM);2023-12-09
4. Demonstration of Millimeter-Wave GaN IMPATT Oscillator at Ka-band;2023 International Electron Devices Meeting (IEDM);2023-12-09
5. Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses;2023 International Electron Devices Meeting (IEDM);2023-12-09
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