Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction
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Published:2017-09
Issue:9
Volume:38
Page:1192-1195
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Chen Yi-JuORCID,
Tsui Bing-Yue,
Chou Hung-Ju,
Li Ching-I.,
Lin Ger-Pin,
Hu Shao-Yu
Funder
Ministry of Education in Taiwan under ATU Program through the Ministry of Science and Technology, Taiwan
Research of Excellence program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Impact of Metals on Silicon Devices and Circuits;Metal Impurities in Silicon- and Germanium-Based Technologies;2018