Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET-Reference-Cited by-同舟云学术

Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Published:2017-08 Issue:8 Volume:38 Page:1008-1011
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Seung-Wook,Bang Tewook,Kim Choong-Ki,Hwang Kyu-Man,Jang Byung Chul,Moon Dong-Il,Bae Hagyoul,Seo Myungsoo,Kim Seong-Yeon,Kim Do-Hyun,Choi Sung-Yool,Choi Yang-Kyu^ORCID

Funder

Center for Integrated Smart Sensors through the Ministry of Science, ICT and Future Planning as the Global Frontier Project

Pioneer Research Center Program through the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning

Global Frontier Center for Advanced Soft Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7990274/07954656.pdf?arnumber=7954656

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