Exploring the Effect of Gate Oxide Process on Electrical Performance of CMOS Device
Author:
Affiliation:
1. School of Microelectronics, University of Science and Technology of China,Hefei,China,2030026
2. School of Micro-Nano Electronics, Zhejiang University,Hangzhou,China,311200
3. Zhejiang ICsprout Semiconductor Co., Ltd.,Hangzhou,China,311200
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531942.pdf?arnumber=10531942
Reference6 articles.
1. Reliability challenges in CMOS technology: A manufacturing process perspective
2. In situ steam generation: A new rapid thermal oxidation technique;Kuppurao;SOLID STATE TECHNOLOGY,2000
3. Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2
4. Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology
5. Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectrics
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