Mechanism Research and Improvement of AL Scratch Defect Based on MG CMP
Author:
Affiliation:
1. Shanghai Huali Integrated Circuit Corp.,Advanced Module Technology Dept.,Shanghai,China,201314
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531975.pdf?arnumber=10531975
Reference4 articles.
1. ILD0 CMP: Technology enabler for high K metal gate in high performance logic devices
2. CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology
3. Integrating High-k /Metal Gates: Gate-First or Gate-Last?;Hoffman;Solid State Technology,2010
4. Gate First or Gate Last: Technologist Debate High-k;Lammers;Semiconductor International,2010
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