Interface Treatment of Epitaxial SI FINFET Channel in Replace Metal Gate with Simultaneously Performance Improvement and Leakage Reduction-Reference-Cited by-同舟云学术

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Interface Treatment of Epitaxial SI FINFET Channel in Replace Metal Gate with Simultaneously Performance Improvement and Leakage Reduction

Published:2024-03-17 Issue: Volume:18 Page:1-3
ISSN:
Container-title:2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
language:
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Author:

Jiang Renjie¹,Cao Lei¹,Xiong Wenjuan¹,Yao Jiaxin¹,Wang Peng¹,Zhang Yadong¹,Sang Guanqiao¹,Li Lianlian¹,Zhang Meihe¹,Yin Huaxiang¹,Luo Jun¹

Affiliation:

1. Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,China,100029

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531916.pdf?arnumber=10531916

Reference10 articles.

1. Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

2. Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

3. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

4. Handbook of Silicon Based MEMS Materials and Technologies

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