A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process-Reference-Cited by-同舟云学术

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A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process

Published:2011-11 Issue: Volume: Page:
ISSN:
Container-title:IEEE Asian Solid-State Circuits Conference 2011
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Author:

Onouchi Masafumi,Otsuga Kazuo,Igarashi Yasuto,Ikeya Toyohito,Morita Sadayuki,Ishibashi Koichiro,Yanagisawa Kazumasa

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6118260/6123555/06123569.pdf?arnumber=6123569

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2. Design of a high-voltage resistant and highly reliable LDO for automotive applications;IEICE Electronics Express;2022-11-10

3. A Transient-Enhanced Low-Power Standard-Cell-Based Digital LDO;Arabian Journal for Science and Engineering;2022-02-04

4. Multiphase Digital Low-Dropout Regulators;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2022-01

5. A CMOS standard-cell based fully-synthesizable low-dropout regulator for ultra-low power applications;AEU - International Journal of Electronics and Communications;2021-11

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