Analysis of Short-Circuit Characteristics and the Design of a Novel Protection Circuit for SiC MOSFETs-Reference-Cited by-同舟云学术

Analysis of Short-Circuit Characteristics and the Design of a Novel Protection Circuit for SiC MOSFETs

Published:2022-02-25 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Power Energy Systems and Applications (ICoPESA)
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Author:

Qin Haihong¹,Yang Yueru¹,Xie Sixuan¹,Peng Jiangjin¹,Hu Haoxiang¹,Bu Feifei¹

Affiliation:

1. Nanjing University of Aeronautics and Astronautics,College of Automation Engineering,Nanjing,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9754366/9754381/09754412.pdf?arnumber=9754412

Reference20 articles.

1. Short-circuit tests on SiC power MOSFETs

2. Short-circuit evaluation and overcurrent protection for SiC power MOSFETs

3. Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

4. A Reliable Gate Driver with Desaturation and Over-Voltage Protection Circuits for SiC MOSFET;yin;PCIM Asia 2018 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2018

5. Analysis and design of an overcurrent protection scheme based on parasitic inductance of SiC MOSFET power module

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