Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric-Reference-Cited by-同舟云学术

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Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric

Published:2001-06 Issue:6 Volume:22 Page:263-265
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhen-Cheng Wu ,Chiu-Chih Chiang ,Wei-Hao Wu ,Mao-Chieh Chen ,Shwang-Ming Jeng ,Lain-Jong Li ,Syun-Ming Jang ,Chen-Hua Yu ,Mong-Song Liang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/20008/00924836.pdf?arnumber=924836

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Improvement of Characteristic Ramped Voltage Breakdown in Multi-Level Cu/SiOC Low k Integration;ECS Transactions;2010-11-23

3. Modeling of the breakdown mechanisms for porous copper/low-k process flows;Microelectronics Reliability;2007-09

4. Real-Time Investigation of Conduction Mechanism With Bias Stress in Silica-Based Intermetal Dielectrics;IEEE Transactions on Device and Materials Reliability;2007-06

5. Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidation;Thin Solid Films;2007-02

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