Performance Comparison of V-band T/R Amplifier Module in SiGe Technology using Aluminium and Copper Back-end of line-Reference-Cited by-同舟云学术

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Performance Comparison of V-band T/R Amplifier Module in SiGe Technology using Aluminium and Copper Back-end of line

Published:2022-01-16 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Gadallah Ahmed¹,Eissa Mohamed H.¹,Kissinger Dietmar²,Malignaggi Andrea¹

Affiliation:

1. IHP – Leibniz-Institut für innovative Mikroelektronik,Frankfurt (Oder),Germany

2. Ulm University,Ulm,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720035/9720036/09720040.pdf?arnumber=9720040

Reference7 articles.

1. A V-Band Miniaturized Bidirectional Switchless PALNA in SiGe:C BiCMOS Technology

2. Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type Matching Topology

3. A scalable 8-channel bidirectional V-band beamformer in 130 nm SiGe:C BiCMOS technology

4. A 62 GHz Tx/Rx 2x128-Element Dual-Polarized Dual-Beam Wafer-Scale Phased-Array Transceiver with Minimal Reticle-to-Reticle Stitching

5. A 28-/60-GHz Band-Switchable Bidirectional Amplifier for Reconfigurable mm-Wave Transceivers

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