SOI technology pushes the limits of CMOS for RF applications-Reference-Cited by-同舟云学术

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SOI technology pushes the limits of CMOS for RF applications

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Raskin Jean-Pierre

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7440957/7445433/7445456.pdf?arnumber=7445456

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer;Semiconductor Science and Technology;2023-07-21

2. Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET;Microsystem Technologies;2023-04

3. The Hardware Foundation of 6G: The NEW-6G Approach;2022 Joint European Conference on Networks and Communications & 6G Summit (EuCNC/6G Summit);2022-06-07

4. SiC ‐based analytical model for gate‐stack dual metal nanowire FET with enhanced analog performance;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-02

5. RF Performance of Devices Processed in Low-Temperature Sequential Integration;IEEE Transactions on Electron Devices;2021-07

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