Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz-Reference-Cited by-同舟云学术

Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz

Published:2024-04 Issue:4 Volume:34 Page:395-398
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Akso Emre¹^ORCID,Li Weiyi¹^ORCID,Clymore Christopher¹,O’Malley Everett¹^ORCID,Guidry Matthew¹^ORCID,Kim Justin¹^ORCID,Romanczyk Brian¹^ORCID,Collins Henry¹^ORCID,Wang Boyu¹^ORCID,Wurm Christian¹,Hatui Nirupam¹,Keller Stacia¹^ORCID,Buckwalter James F.¹^ORCID,Mishra Umesh K.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA

Funder

Semiconductor Research Corporation (SRC) and Defense Advanced Research Projects Agency (DARPA) through the JUMP Program (Dr

Department of Defense University Research Instrumentation Program (DURIP) Grants through ONR (Dr

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10495307/10440568.pdf?arnumber=10440568

Reference20 articles.

1. A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE

2. A 200 mW D-band power amplifier with 17.8% PAE in 250-nm InP HBT technology;Ahmed

3. D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

4. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI

5. F-Band, GaN Power Amplifiers

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