Model requirements for simulation of low-voltage MOSFET in automotive applications-Reference-Cited by-同舟云学术

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Model requirements for simulation of low-voltage MOSFET in automotive applications

Published:2006-05 Issue:3 Volume:21 Page:613-624
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Buttay C.,Morel H.,Allard B.,Lefranc P.,Brevet O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/34172/01629001.pdf?arnumber=1629001

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Physics Models of a Low-Voltage Power Semiconductor System-in-Package for Automotive Applications;Journal of Electronic Packaging;2022-12-23

2. Interleaved Buck-Type Rectifier with Pseudo-DC-Link Capacitors for Automatic Current Balancing;IEEE Transactions on Industrial Electronics;2021

3. A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations;IEEE Transactions on Power Electronics;2016-04

4. Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs;IEEE Transactions on Electron Devices;2014-07

5. Temperature Sensing for Power MOSFETs in Short-Duration Avalanche Mode;IEEE Transactions on Device and Materials Reliability;2014-03

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