A K-band Gilbert-Cell Frequency Doubler with Self-Adjusted 25% LO Duty-Cycle in SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

A K-band Gilbert-Cell Frequency Doubler with Self-Adjusted 25% LO Duty-Cycle in SiGe BiCMOS Technology

Published:2022-09-19 Issue: Volume: Page:
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Container-title:ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
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Author:

Piotto Lorenzo¹,De Filippi Guglielmo¹,Maistro Daniele Dal²,Erba Simone²,Mazzanti Andrea¹

Affiliation:

1. Univeristy of Pavia,Italy

2. Infineon Technologies AG,Villach,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911526.pdf?arnumber=9911526

Reference14 articles.

1. A K-Band Frequency Doubler in 0. 15-µm GaAs pHEMT with an Autonomous Circuit for Stability Analysis;lu;2018 IEEE International Symposium on Radio-Frequency Integration Technol-ogy (RFIT),2018

2. An Ultra-Low Power K band Balanced Frequency Doubler with a Novel Current-reused Structure

3. A ka-band broadband active frequency doubler using CB-CE balanced configuration in 0.18 µm SiGe BiCMOS process

4. Broadband Balanced Frequency Doublers With Fundamental Rejection Enhancement Using a Novel Compensated Marchand Balun

5. A 27–41 GHz Frequency Doubler With Conversion Gain of 12 dB and PAE of 16.9%

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3. A 14–32 GHz SiGe-BiCMOS Gilbert-Cell Frequency Doubler With Self-Adjusted Reduced Duty-Cycle Performance Enhancement;IEEE Journal of Solid-State Circuits;2023