Non-Volatile Ternary Content Addressable Memory based on Phase Change Nanoelectromechanical (NEM) Relay
Author:
Affiliation:
1. Carnegie Mellon University,Electrical and Computer Engineering,Pittsburgh,USA
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911327.pdf?arnumber=9911327
Reference25 articles.
1. Nanoelectromechanical Switches for Low-Power Digital Computing
2. Dynamic Ternary Content-Addressable Memory Is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays
3. Phase Change Nanoelectromechanical Relay for Nonvolatile Low Leakage Switching
4. Performance Analysis of Nanoelectromechanical Relay-Based Field-Programmable Gate Arrays
5. A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability Using Far-Side Driving Scheme and Self-Adjust Reference Match-Line Amplifier
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