A 4nm FinFET 0.8V 13ppm/°C Switched Capacitor Based Current Mode Bandgap Reference
Author:
Affiliation:
1. IP Engineering Group Intel Corp.,Hudson,MA,USA
2. IP Engineering Group Intel Corp.,Portland,OR,USA
3. IP Engineering Group Intel Corp.,Santa Clara,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10268677/10268683/10268769.pdf?arnumber=10268769
Reference7 articles.
1. A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers
2. An Area-Efficient Current-Mode Bandgap Reference With Intrinsic Robust Start-Up Behavior
3. A 0.7V, 2.35 3? -accuracy bandgap reference in 12nm CMOS;yw chen;ISSCC,2019
4. A Sub-1-V Low-Noise Bandgap Voltage Reference
5. A single-trim CMOS bandgap reference with a 3? inaccuracy of ± 0.15 from -40°C to 125°C;ge;ISSCC,2010
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1. A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration;Microelectronics Journal;2024-08
2. A CMOS-Integrated 23.88-ppm/° C, 6.825-µW Voltage Reference with Offset-Self-Cancellation for Portable Biomedical Equipment Applications;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
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