A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses-Reference-Cited by-同舟云学术

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A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses

Published:2019-11 Issue:11 Volume:47 Page:5180-5185
ISSN:0093-3813
Container-title:IEEE Transactions on Plasma Science
language:
Short-container-title:IEEE Trans. Plasma Sci.

Author:

Zhang Cunbo^ORCID,Yan Tao,Yang Zhiqiang,Ren Weitao,Zhu Zhanping

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Condensed Matter Physics,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/27/8902243/08883233.pdf?arnumber=8883233

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Analysis Model Inside MOSFETs Under HPEMPs Based on the Thermal Flux Boundary Condition;2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT);2023-07-21

2. High-power microwave pulse induced failure on InGaP/GaAs heterojunction bipolar transistor;Microelectronics Reliability;2022-12

3. Experimental Study on the Factors of the Oil Shale Thermal Breakdown in High-Voltage Power Frequency Electric Heating Technology;Energies;2022-09-29

4. Nonlinear Properties of GaAs/InGaP HBT Under High-Power Microwave Pulse Injection;IEEE Transactions on Plasma Science;2022-09

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