Performance Improvement via Stack Engineering and Post-bake Retention State Stabilization in Fully CMOS Compatible HfO<sub>2</sub>-based RRAM-Reference-Cited by-同舟云学术

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Performance Improvement via Stack Engineering and Post-bake Retention State Stabilization in Fully CMOS Compatible HfO₂-based RRAM

Published:2023-07-23 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
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Author:

Samanta Subhranu¹,Zhixian Chen¹,Lee Hock Koon¹,Wang Weijie¹,Wendong Song¹,Zhu Yao¹,Chen Li¹,Liu Chen¹

Affiliation:

1. Institute of Microelectronics,Agency for Science Technology and Research (A*STAR),Singapore

Funder

Science and Engineering Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10265288/10265319/10265654.pdf?arnumber=10265654

Reference7 articles.

1. 10×10nm² Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

2. Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO x -Based Memory Platform

3. Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

4. High-k Gate Dielectrics for CMOS Technology

5. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

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