Improved Switching Performance of 3.3kV SiC MOSFETs using Synchronous Rectification in A Voltage Source Inverter
Author:
Affiliation:
1. University of Nottingham UK,Department of Electrical and Electronic Engineering,Nottingham,United Kingdom
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773536.pdf?arnumber=9773536
Reference9 articles.
1. The influence of turn-off dead time on the reverse-recovery behaviour of synchronous rectifiers in automotive dc/dc-converters;polenov;2009 13th European Conference on Power Electronics and Applications,0
2. Criteria for Using Antiparallel SiC SBDs With SiC mosfets for SiC-Based Inverters
3. Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications
4. Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode
5. Methodology for Wide Band-Gap Device Dynamic Characterization
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Influence of Packaging on the High Voltage SiC MOSFET Termination;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10
2. Investigation of Reverse Recovery Phenomenon for SiC MOSFETs in High-Temperature Applications;IEEE Transactions on Power Electronics;2023-11
3. Dynamic Performance Comparison of SiC Power Modules With and Without Schottky Diode Operating from 25 to 250°C Junction Temperature;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
4. A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching;Micromachines;2023-06-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3