Improved Switching Performance of 3.3kV SiC MOSFETs using Synchronous Rectification in A Voltage Source Inverter-Reference-Cited by-同舟云学术

Improved Switching Performance of 3.3kV SiC MOSFETs using Synchronous Rectification in A Voltage Source Inverter

Published:2022-03-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Pal Anirban¹,Pilli Naresh K¹,Klumpner Christian¹,Ahmed Md Rishad¹

Affiliation:

1. University of Nottingham UK,Department of Electrical and Electronic Engineering,Nottingham,United Kingdom

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773536.pdf?arnumber=9773536

Reference9 articles.

1. The influence of turn-off dead time on the reverse-recovery behaviour of synchronous rectifiers in automotive dc/dc-converters;polenov;2009 13th European Conference on Power Electronics and Applications,0

2. Criteria for Using Antiparallel SiC SBDs With SiC mosfets for SiC-Based Inverters

3. Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

4. Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode

5. Methodology for Wide Band-Gap Device Dynamic Characterization

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