Overvoltage Ruggedness and Dynamic Breakdown Voltage of P-Gate GaN HEMTs in High-Frequency Switching up to Megahertz
Author:
Affiliation:
1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University,Blacksburg,VA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773713.pdf?arnumber=9773713
Reference14 articles.
1. True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
2. Dynamic Breakdown Voltage of GaN Power HEMTs
3. Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers
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1. Power Loop Inductance Optimization Strategy for Eliminating Turn-off Switching Surge for GaN-HEMT Switching Device;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
2. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07
3. Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz;IEEE Transactions on Power Electronics;2023-05
4. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
5. GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure?;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
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