Microwave switching functions using reversible metal-insulator transition (MIT) in VO2 thin films-Reference-Cited by-同舟云学术

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Microwave switching functions using reversible metal-insulator transition (MIT) in VO2 thin films

Published:2007-10 Issue: Volume: Page:
ISSN:
Container-title:2007 European Microwave Conference
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Author:

Crunteanu Aurelian,Dumas-Bouchiat Frederic,Champeaux Corinne,Catherinot Alain,Pothier Arnaud,Blondy Pierre

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4405081/4405082/04405113.pdf?arnumber=4405113

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High frequency resistive switching behavior of amorphous TiO2 and NiO;Scientific Reports;2022-08-13

2. Phase analysis of VO2 thin film and the mechanism of the electrically triggered metal-insulator transition of VO2;Nanophotonic Materials XIV;2017-08-28

3. Characterizing Metal Insulator Transition (MIT) Materials for Use as Micro-Switch Elements;MEMS and Nanotechnology, Volume 6;2012-08-10

4. Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon;IEEE Electron Device Letters;2011-11

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