High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz-Reference-Cited by-同舟云学术

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High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz

Published:2008-10 Issue: Volume: Page:
ISSN:
Container-title:2008 38th European Microwave Conference
language:
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Author:

Kuroda Kenta,Ishikawa Ryo,Honjo Kazuhiko

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4747408/4751336/04751483.pdf?arnumber=4751483

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. H-Shaped Slot Antenna with Harmonic Tuning Function and Integrated Power Amplifier;Energies;2023-02-22

2. Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks;Radioengineering;2021-06-16

3. Microwave Solid-State Amplifiers;Lecture Notes in Electrical Engineering;2018-12-11

4. Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology;IEICE Electronics Express;2013

5. A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network;IEICE Transactions on Electronics;2012

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