Consistency of the Two Component Composite Modeling Framework for NBTI in Large and Small Area p-MOSFETs-Reference-Cited by-同舟云学术

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Consistency of the Two Component Composite Modeling Framework for NBTI in Large and Small Area p-MOSFETs

Published:2017-01 Issue:1 Volume:64 Page:256-263
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chaudhary Ankush^ORCID,Fernandez Beryl,Parihar Narendra^ORCID,Mahapatra Souvik

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7792766/07775005.pdf?arnumber=7775005

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NBTI Effect Survey for Low Power Systems in Ultra-Nanoregime;Current Nanoscience;2024-05

2. Statistical Observations of Three Co-Existing NBTI Behaviors in 28 nm HKMG by On-Chip Monitor With Less Recovery Impact;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-12

3. Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET;Micromachines;2022-05-23

4. BAT Framework Modeling of RMG HKMG SOI FinFETs;Recent Advances in PMOS Negative Bias Temperature Instability;2021-11-26

5. Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs;IEEE Access;2021

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