Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry-Reference-Cited by-同舟云学术

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Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

Published:2017-01 Issue:1 Volume:64 Page:78-83
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pavlidis Georges,Pavlidis Spyridon^ORCID,Heller Eric R.,Moore Elizabeth A.,Vetury Ramakrishna,Graham Samuel^ORCID

Funder

Air Force Research Laboratory led High Reliability Electronics Virtual Center

DARPA

Air Force Office of Scientific Research (Program Officer: Dr. M. Kendra)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7792766/07774999.pdf?arnumber=7774999

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal engineering increases current density in AlGaN/GaN superlattice devices;Applied Physics Letters;2024-07-01

2. Automatic in-situ measurement of thermal resistance for GaN HEMTs;Microelectronics Journal;2024-07

3. CMOS on-chip thermometry at deep cryogenic temperatures;Applied Physics Reviews;2024-04-17

4. A Transconductance-Based Extraction Method for Thermal Resistance in GaN HEMTs;IEEE Transactions on Electron Devices;2024-02

5. Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT;Microelectronics Reliability;2024-01

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