Germanium-on-insulator (GeOI) structures realized by the Smart Cut/spl trade/ technology-Reference-Cited by-同舟云学术

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Germanium-on-insulator (GeOI) structures realized by the Smart Cut/spl trade/ technology

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Container-title:2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573)
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Author:

Deguet C.,Morales C.,Dechamp J.,Hartmann J.M.,Charvet A.M.,Moriceau H.,Chieux F.,Beaumont A.,Clavelier L.,Loup V.,Kernevez N.,Raskin G.,Richtarch C.,Allibert F.,Letertre F.,Mazure C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9580/30296/01391571.pdf?arnumber=1391571

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation techniques for upper active channel in monolithic 3D integration: an overview;Nano Convergence;2024-01-29

2. Fabrication and characterization of silicon-on-insulator wafers;Micro and Nano Systems Letters;2023-11-13

3. Integrated nonlinear photonics in the longwave-infrared: A roadmap;MRS Communications;2023-08-22

4. Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate;Journal of Alloys and Compounds;2021-03

5. Centimeter-Scale Ge-Assisted Grown Graphene Directly on SiO2/Si for NO2 Gas Sensors;IEEE Sensors Journal;2021-02-15

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