Impact of Mn- and Fe-Doping on Electronic and Magnetic Properties of MoX₂ (<i>X</i> = S, Se) Monolayer-Reference-Cited by-同舟云学术

Impact of Mn- and Fe-Doping on Electronic and Magnetic Properties of MoX₂ (X = S, Se) Monolayer

Published:2022-03 Issue:3 Volume:69 Page:1553-1560
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mishra Neha¹,Pandey Bramha P.¹^ORCID,Kumar Santosh²^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology (MMMUT) Gorakhpur, Gorakhpur, Uttar Pradesh, India

2. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, China

Funder

Double-Hundred Talent Plan of Shandong Province, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09689058.pdf?arnumber=9689058

Reference50 articles.

1. A DFT study of transition metal (Fe, Co, Ni, Cu, Ag, Au, Rh, Pd, Pt and Ir)-embedded monolayer MoS2 for gas adsorption

2. Tuning electronic and magnetic properties in monolayer MoSe2 by metal adsorption

3. Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2